The metal-insulator transition in the impurity band of n-type GaAs induced by a magnetic field and loss of dimension
Author:
Affiliation:
1. a Cavendish Laboratory, University of Cambridge , England
2. b Plessey Company, Allen Clark Research Centre , Caswell, Towcester, Northants, England
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418637808226652
Reference19 articles.
1. Compensation Dependence of Impurity Conduction in Antimony-Doped Germanium
2. Electron spin resonance in n-type GaAs
3. Structure of the Impurity Band and Magnetic-Field-Induced Metal-Non-Metal Transition in n-Type InSb
4. Effect of Uniaxial Compression on Impurity Conduction inn-Type Germanium
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