Electron-phonon interaction and current oscillations in GaAs-AlGaAs tunnel junctions-Reference-Cited by-同舟云学术

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Electron-phonon interaction and current oscillations in GaAs-AlGaAs tunnel junctions

Published:1985-11 Issue:1-3 Volume:134 Page:32-35
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Leburton J.P.

Publisher

Elsevier BV

Subject

General Engineering

Reference8 articles.

1. Origin of the current oscillations in GaAs-AlGaAs tunnel junctions

2. Sequential Single-Phonon Emission in GaAs-AlxGa1−xAsTunnel Junctions

3. Proc. of 17th International Conference on the Physics of Semiconductors;Hickmott,1984

4. Energy-Resolved Measurements of the Phonon-Ionization ofD−andA+Centers in Silicon with Superconducting-Al Tunnel Junctions

5. J.P. Leburton, to be published.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot hole effects in single barrierp‐type GaAs/(AlGa)As/GaAs tunnel structures;Applied Physics Letters;1991-12-09

2. Fine structure in the energy dependence of current density and oscillations in the current-voltage characteristics of tunnel junctions;Physical Review B;1990-07-15

3. The Investigation of Single and Double Barrier (Resonant Tunnelling) Heterostructures Using High Magnetic Fields;Physics of Quantum Electron Devices;1990

4. Transverse Transport in n+GaAs/AlxGa1−xAs/n−GaAs Structures;physica status solidi (b);1989-12-01

5. LO-phonon oscillations and electron freeze-out in transport through In-InP and Sn-InP contacts;Physical Review B;1987-06-15

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