Transfer learning approach to analyzing the work function fluctuation of gate-all-around silicon nanofin field-effect transistors-Reference-Cited by-同舟云学术

Transfer learning approach to analyzing the work function fluctuation of gate-all-around silicon nanofin field-effect transistors

Published:2022-10 Issue: Volume:103 Page:108392
ISSN:0045-7906
Container-title:Computers and Electrical Engineering
language:en
Short-container-title:Computers and Electrical Engineering

Author:

Akbar Chandni,Li Yiming^ORCID,Sung Wen-Li

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,General Computer Science,Control and Systems Engineering

Reference32 articles.

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4. Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices;Li,2015

5. Finfet versus gate-all-around nanowire FET: performance scaling and variability;Nagy;IEEE J Electron Dev Soc,2018

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