Characterization of energy use in 300 mm DRAM (Dynamic Random Access Memory) wafer fabrication plants (fabs) in Taiwan-Reference-Cited by-同舟云学术

Characterization of energy use in 300 mm DRAM (Dynamic Random Access Memory) wafer fabrication plants (fabs) in Taiwan

Published:2010-09 Issue:9 Volume:35 Page:3788-3792
ISSN:0360-5442
Container-title:Energy
language:en
Short-container-title:Energy

Author:

Hu Shih-Cheng,Xu Tengfang,Chaung Tony,Chan David Y.-L.

Publisher

Elsevier BV

Subject

General Energy,Pollution,Mechanical Engineering,Building and Construction,Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Civil and Structural Engineering

Reference12 articles.

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5. The 1.7 kilogram microchip: energy and material use in the production of semiconductor devices;Williams;Environmental Science and Technology,2002

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