High current metal-ion implantation to fabricate metal silicides
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference20 articles.
1. Transition metal silicides in silicon technology
2. Silicides and ohmic contacts
3. Electronic Properties of Semiconducting Silicides
4. Laser‐induced reactions of platinum and other metal films with silicon
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1. Fabrication of high‐purity HfSi 2 powder via molten salt‐assisted magnesium thermal reduction;International Journal of Applied Ceramic Technology;2020-03-17
2. INTERESTING RESISTIVITY BEHAVIOR OF THE Ag–Ni–Si SILICIDE FILMS FORMED AT 850°C BY RAPID THERMAL ANNEALING OF THE Ag–Ni/Si FILMS;International Journal of Modern Physics B;2011-11-10
3. Structural and electrical characterization of the nickel silicide films formed at 850°C by rapid thermal annealing of the Ni/Si(100) films;Applied Surface Science;2010-06
4. Preparation of core-shell Si/NiSi2/carbon composite and its application to lithium secondary batteries;Electrochemistry Communications;2006-09
5. Development of multicathode high flux metal ion plasma sources in Korea;Review of Scientific Instruments;2004-09
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