The effects of cation-substitution on the ferroelectric properties of sol-gel derived PZT thin film for FRAM application-Reference-Cited by-同舟云学术

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The effects of cation-substitution on the ferroelectric properties of sol-gel derived PZT thin film for FRAM application

Published:1999-11 Issue: Volume:355-356 Page:531-535
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Sik Kim Woo,Ha Soon-Mok,Park Hyung-Ho,Eun Kim Chang

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Ferroelectric Memories

2. Charge motion in ferroelectric thin films

3. Fatigue and switching in ferroelectric memories: Theory and experiment

4. Use of Ferroelectric Hysteresis Parameters for Evaluation of Niobium Effects in Lead Zirconate Titanate Thin Films

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1. Tuning Nb Solubility, Electrical Properties, and Imprint through PbO Stoichiometry in PZT Films;Materials;2023-05-25

2. Vacancy-Induced Temperature-Dependent Thermal and Magnetic Properties of Holmium-Substituted Bismuth Ferrite Nanoparticle Compacts;ACS Applied Materials & Interfaces;2022-05-29

3. Pyroelectric and photovoltaic properties of Nb-doped PZT thin films;APL Materials;2021-04-01

4. Double doping effect on ferroelectric and leakage current behavior of Pb(Zr0.52Ti0.48)O3 thin film;Ceramics International;2019-12

5. Atomic layer deposition of PbTiO3 and PbZrxTi1-xO3 films using metal alkyl and alkylamide precursors;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2018-05

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