The surface composition of GaAs affected by reactive plasma
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. A study of the compositional changes in chemically etched, Ar ion bombarded and reactive ion etched GaAs(100) surfaces by means of ARXPS and LEISS
2. Effects of ion bombardment on the chemical reactivity of gallium arsenide(100): variation of bombarding ion mass
3. Investigation of the effects of pretreatment on the interaction between a GaAs(100) surface and an oxygen (ECR) plasma
4. Radical Kinetics in a Fluorocarbon Etching Plasma
5. Drastic Change in CF2and CF3Kinetics Induced by Hydrogen Addition into CF4Etching Plasma
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1. Etching of GaAs in the Plasma of a Freon R-12–Argon (CCl2F2/Ar) Mixture;Russian Microelectronics;2018-11
2. Kinetics and modes of plasmachemical etching of GaAs under conditions of induction HF discharge in CF2Cl2;Russian Microelectronics;2014-11
3. N2 effect on GaAs etching at 150mTorr capacitively-coupled Cl2/N2 plasma;Microelectronic Engineering;2010-04
4. Influence of the argon flow rate on the arsenic fraction of a-GaxAs1−x sputtered at high substrate temperature;Vacuum;2005-01
5. Formation of polymeric layers using halogen–carbon plasmas;Vacuum;2002-11
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