Vacancy-mediated diffusion of atoms at Ge/Si interfaces: An atomistic perspective
Author:
Publisher
Elsevier BV
Subject
General Materials Science
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electronic properties and defect levels induced by n/p-type defect-complexes in Ge;Materials Science in Semiconductor Processing;2022-11
2. Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations;Scientific Reports;2022-02-25
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