Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications-Reference-Cited by-同舟云学术

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Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications

Published:2017-09-04 Issue:21 Volume:32 Page:4025-4040
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Lee Kwang Hong,Bao Shuyu,Lin Yiding,Li Wei,Anantha P,Zhang Lin,Wang Yue,Michel Jurgen,Fitzgerald Eugene A.,Tan Chuan Seng

Abstract

Abstract

Funder

National Research Foundation Singapore

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference123 articles.

1. Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism

2. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

3. Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator

4. Photonics in the Mid-Infrared: Challenges in Single-Chip Integration and Absorption Sensing

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