Solid solubility and site preference of Ti in 3C- and 6H-SiC
Author:
Publisher
Elsevier BV
Subject
General Materials Science
Reference64 articles.
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4. Anisotropic defect distribution in He+-irradiated H-SiC: effect of stress on defect distribution;Yang;Acta Mater.,2021
5. Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC;Fujie;Acta Mater.,2021
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