Fabrication perspective of Fe3O4-based cross-cell memristive device for synaptic applications-Reference-Cited by-同舟云学术

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Fabrication perspective of Fe3O4-based cross-cell memristive device for synaptic applications

Published:2024-07 Issue: Volume:63 Page:48-55
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Singh Vivek Pratap^ORCID,Singh Chandra Prakash,Ranjan Harsh,Kumar Gaurav,Jaiswal Jyoti,Pandey Saurabh Kumar^ORCID

Publisher

Elsevier BV

Reference31 articles.

1. Memristor-the missing circuit element;Chua;IEEE Trans. Circ. Theor.,1971

2. The missing memristor found;Strukov;Nature,2008

3. Memristive technologies for data storage, computation, encryption, and radio-frequency communication;Lanza;Science,2022

4. Variability and power enhancement of current controlled resistive switching devices;Vinuesa;Microelectron. Eng.,2023

5. Investigation of resistive switching dynamics in e-beam evaporated P-type tin-oxide based cross-cell memristor for synaptic and memory application;Singh;Mater. Lett.,2023

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