In situ control of nanowire resistance with real time monitoring by using self-heating induced oxidation-Reference-Cited by-同舟云学术

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In situ control of nanowire resistance with real time monitoring by using self-heating induced oxidation

Published:2020-07 Issue:7 Volume:20 Page:871-876
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Zong Yang,Huang Hui,Zhao Danna,Tang Zhenan

Funder

New Century Excellent Talents in the University of China

International S&T Cooperation Program of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference40 articles.

1. GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope

2. Single-electron transistors in GaN∕AlGaN heterostructures

3. Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approach

4. Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency

5. A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure

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1. Room temperature hydrogen gas sensor based on Pd decorated bridging GaN nanowires;Sensors and Actuators B: Chemical;2024-10

2. UV-activated room temperature oxygen gas sensor based on TiO2-decorated bridging GaN nanowires;Sensors and Actuators B: Chemical;2024-02

3. A Reliable Strain Sensor Based on Bridging GaN Nanowires;IEEE Sensors Journal;2023-01-01

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