Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference14 articles.
1. Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia
2. Silicon nitride films deposited at substrate temperatures <100 °C in a permanent magnet electron cyclotron resonance plasma
3. Pulsed radio frequency plasma deposition of a-SiNx:H alloys: Film properties, growth mechanism, and applications
4. Temperature effect on deposition rate of silicon nitride films
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2. Pulsed-radio frequency plasma enhanced chemical vapour deposition of low temperature silicon nitride for thin film transistors;Thin Solid Films;2012-05
3. Duty ratio impact on SiN films deposited in SiH4-NH3 plasma at room temperature;Microelectronic Engineering;2012-01
4. Impact of Duty Ratio-Controlled Ion Energy on Surface Roughness of Silicon Nitride Films Deposited Using a SiH4–NH3 Plasma;Journal of Nanoscience and Nanotechnology;2011-07-01
5. Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH4–NH3 plasma;Current Applied Physics;2011-01
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