Effects of oxygen plasma pre-treatments on the characteristics of n-ZnO/p-Si heterojunction diodes-Reference-Cited by-同舟云学术

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Effects of oxygen plasma pre-treatments on the characteristics of n-ZnO/p-Si heterojunction diodes

Published:2014-10 Issue:10 Volume:14 Page:1380-1384
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Kim Changmin,Lee Hwangho,Lee Byoungho,Lee Youngmin,Lee Sejoon,Kim Deuk Young

Funder

National Research Foundation of Korea

Basic Science Research Program

Korean Government – Ministry of Education (MoE)

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference35 articles.

1. 65 years of ZnO research – old and very recent results;Klingshirn;Phys. Stat. Sol. B,2010

2. ZnO devices and applications: a review of current status and future prospects;Özgür;Proc. IEEE,2010

3. The grain size effects on the photoluminescence of ZnO/α-Al2O3 grown by radio-frequency magnetron sputtering;Kim;J. Appl. Phys.,2000

4. Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire;Vigué;J. Appl. Phys.,2001

5. Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001) substrates;Ohtomo;Appl. Phys. Lett.,1999

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