Growth of n-Ga doped ZnO nanowires interconnected with disks over p-Si substrate and their heterojunction diode application

Abstract

In this paper, the heterojunction diode based on n-Ga doped ZnO nanowires interconnected with disks/p-Si assembly was fabricated and their low-temperature electrical properties were examined. The Ga-doped ZnO nanowires interconnected with disks were grown over p-Si substrate and studied by numerous techniques to understand the structural, compositional and morphological characteristics. Electrical properties, at lowtemperatures ranging from 77 K–295 K, were examined for the fabricated heterojunction diode assembly both in reverse and forward biased conditions which exhibited an excellent stability over all the temperature range. The detailed electrical characterizations revealed that the current decreases gradually from 1.9 μA, to 0.87 μA to 0.84 μA when temperature increases from 77 K, 100 K to 150 K and then increases gradually from 1.86 μA–3.36 μA and to 9.95 μA when temperature increases from 200 K–250 K and to 295 K, respectively. Both the highest rectifying ratio at 100 K and the lowest one at 295 K occur in the voltage range of 2–5 V.