Formation of SiO2/Si structure with low interface state density by atmospheric-pressure VHF plasma oxidation-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Formation of SiO2/Si structure with low interface state density by atmospheric-pressure VHF plasma oxidation

Published:2012-12 Issue: Volume:12 Page:S57-S62
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Zhuo Zeteng,Sannomiya Yuta,Goto Kazuma,Yamada Takahiro,Ohmi Hiromasa,Kakiuchi Hiroaki,Yasutake Kiyoshi

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference25 articles.

1. Limiting efficiency of bulk and thin-film silicon solar cells in the presence of surface recombination

2. Very low bulk and surface recombination in oxidized silicon wafers

3. Low temperature silicon oxide and nitride for surface passivation of silicon solar cells

4. SHORT COMMUNICATION: ACCELERATED PUBLICATION: Multicrystalline silicon solar cells exceeding 20% efficiency

5. Record low SiO2/Si interface state density for low temperature oxides prepared by direct plasma‐enhanced chemical vapor deposition

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Scalable, High-Throughput, and Environmentally Benign Approach to Polymer Dielectrics Exhibiting Significantly Improved Capacitive Performance at High Temperatures;Advanced Materials;2018-10-03

2. Investigation of Degradation of Electrical Properties after Thermal Oxidation of p-Type Cz-Silicon Wafers;Acta Physica Polonica A;2017-09

3. Passivation at the interface between liquid-phase crystallized silicon and silicon oxynitride in thin film solar cells;Progress in Photovoltaics: Research and Applications;2016-12-19

4. Impact of Interfacial Fixed Charges on the Electrical Characteristics of Pocket-Doped Double-Gate Tunnel FET;IEEE Transactions on Device and Materials Reliability;2016-06

5. Hydrogenated Silicon Nitride SiNx:H Deposited by Dielectric Barrier Discharge for Photovoltaics;Plasma Processes and Polymers;2015-12-16

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3