Characteristics of nitrogen-incorporated silicon oxycarbide films and plasmas for plasma enhanced chemical vapor deposition with TMOS/N2/NH3
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference33 articles.
1. Plasma‐enhanced growth, composition, and refractive index of silicon oxy‐nitride films
2. PECVD-SiOxNy films for large area self-sustained grids applications
3. Optimal control on composition and optical properties of silicon oxynitride thin films
4. A comparative study of oxygen/organosilicon plasmas and thin SiOxCyHz films deposited in a helicon reactor
5. Plasma enhanced chemical vapor deposition of nitrogen-incorporated silicon oxide films using TMOS/N2O gas
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1. Improving the oxygen barrier properties of PET polymer by radio frequency plasma-polymerized SiOxNy thin film;Surface and Coatings Technology;2019-01
2. Facile silicification of plastic surface for bioassays;Chemical Communications;2017
3. Effect of Zinc Oxide Films on Si Substrates Growth by Microwave Plasma Jet Sintering System;Journal of Nano Research;2013-05
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