Effects of trench oxide and field plates on the breakdown voltage of SOI LDMOSFET
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference7 articles.
1. High-Voltage SOI Power IC Technology with non-RESURF n-LDMOSFET and RESURF p-LDMOSFET for PDP Scan-Driver Applications
2. Silicon-on-insulator power integrated circuits
3. Analysis of the breakdown voltage in SOI and SOS technologies
4. RESURF LDMOSFET with a trench for SOI power integrated circuits
5. T. Kubota, in: Proceedings of the ISPDS, vol. 245, 2003.
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A novel lateral diffused metal oxide semiconductor (LDMOS) by attracting the electric field Lines;Physica E: Low-dimensional Systems and Nanostructures;2015-11
2. Thin layer oxide in the drift region of Laterally double-diffused metal oxide semiconductor on silicon-on-insulator: A novel device structure enabling reliable high-temperature power transistors;Materials Science in Semiconductor Processing;2015-02
3. Physics-Based Low-Cost Test Technique for High Voltage LDMOS;Journal of Electronic Testing;2013-11-15
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