Thin layer oxide in the drift region of Laterally double-diffused metal oxide semiconductor on silicon-on-insulator: A novel device structure enabling reliable high-temperature power transistors-Reference-Cited by-同舟云学术

Thin layer oxide in the drift region of Laterally double-diffused metal oxide semiconductor on silicon-on-insulator: A novel device structure enabling reliable high-temperature power transistors

Published:2015-02 Issue: Volume:30 Page:599-604
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Mehrad Mahsa

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. The Best Control of Parasitic BJT Effect in SOI-LDMOS With SiGe Window Under Channel

2. Injected charges in partial SOI LDMOSFETs: A new technique for improving the breakdown voltage

3. New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region

4. Positive charges at buried oxide interface of RESURF: An analytical model for the breakdown voltage

5. A novel high voltage lateral double diffused metal oxide semiconductor (LDMOS) device with a U-shaped buried oxide feature

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