Magnetic properties of exciton trapped by an off-center ionized donor in single quantum dot-Reference-Cited by-同舟云学术

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Magnetic properties of exciton trapped by an off-center ionized donor in single quantum dot

Published:2021-03 Issue: Volume:23 Page:1-7
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Bosch J.^ORCID,Talbi A.^ORCID,Baskoutas S.^ORCID,Feddi E.

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference28 articles.

1. Semiconductor Quantum Dots;Masumoto,2002

2. Heavily doped semiconductor nanocrystal quantum dots;Mocatta;Science,2011

3. Single dopants in semiconductors;Koenraad;Nat. Mater.,2011

4. Binding energy of ionized-donor-bound excitons in two-dimensional semicon- ductors;Stauffer;Phys. Rev. B,1989

5. Ground state energy of an exciton bound to an ionized donor impurity in two dimensional semiconductors;Stébé;Superlattice. Microst.,1989

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1. Design and optimization of a fault‐tolerant demultiplexer based on nano‐scale quantum‐dots;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-01-22

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