Enhancement of CMP pad lifetime for shallow trench isolation process using profile simulation-Reference-Cited by-同舟云学术

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Enhancement of CMP pad lifetime for shallow trench isolation process using profile simulation

Published:2009-01 Issue:1 Volume:9 Page:S134-S137
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Lee Woo-Jin,Park Hyung-Soon,Shin Heon-Cheol

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference7 articles.

1. K. Achuthan et al., in: CMP-MIC Conference, February 1996.

2. Investigation of pad deformation and conditioning during the CMP of silicon dioxide films

3. J.Z. Zheng, S.K.V. Huang, W.S.M. Toh, W.S.C. Tay, C. Feng, Z.B. Bin, in: CMP-MIC Conference, February 1997.

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review;International Journal of Precision Engineering and Manufacturing-Green Technology;2021-11-26

2. Contact-Area-Changeable CMP Conditioning for Enhancing Pad Lifetime;Applied Sciences;2021-04-14

3. On the Planarization Mechanism and Pad Aging Effects of Soft Pad Polishing: A Perspective From the Micro-Mechanical Properties of Soft Pads;Journal of Tribology;2019-04-18

4. Investigation of pad wear in CMP with swing-arm conditioning and uniformity of material removal;Precision Engineering;2017-07

5. Scratch formation and its mechanism in chemical mechanical planarization (CMP);Friction;2013-11-14

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