Effect of ammonia (NH3) plasma treatment on silicon nitride (SiNx) gate dielectric for organic thin film transistor with soluble organic semiconductor-Reference-Cited by-同舟云学术

Effect of ammonia (NH3) plasma treatment on silicon nitride (SiNx) gate dielectric for organic thin film transistor with soluble organic semiconductor

Published:2011-09 Issue:5 Volume:11 Page:S67-S72
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Kim DongWoo,Kim DooHyun,Kim HyoungJin,So HyunWook,Hong MunPyo

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference34 articles.

1. 3.5: Invited Paper: Recent Progress in Large Sized & High Performance Organic TFT Array

2. Monolayer to Multilayer Nanostructural Growth Transition in N-Type Oligothiophenes on Au(111) and Implications for Organic Field-Effect Transistor Performance

3. Thin Film Deposition, Patterning, and Printing in Organic Thin Film Transistors

4. High performance organic thin-film transistors with photopatterned gate dielectric

5. Hysteresis of pentacene thin-film transistors and inverters with cross-linked poly(4-vinylphenol) gate dielectrics

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