Deposition rate of SiN film grown by using a pulsed-PECVD at room-temperature
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference19 articles.
1. Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia
2. Silicon nitride films deposited at substrate temperatures <100 °C in a permanent magnet electron cyclotron resonance plasma
3. Pulsed radio frequency plasma deposition of a-SiNx:H alloys: Film properties, growth mechanism, and applications
4. Characteristics of low-temperature silicon nitride (SiNx:H) using electron cyclotron resonance plasma
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3. Optimization of the Synthesis Conditions of a DBD Plasma Reactor for the Synthesis of Hybrid Silica-Based Catalysts;Plasma Processes and Polymers;2014-03-07
4. A design of experiments approach for the development of plasma synthesized Sn-silicate catalysts for the isomerization of glucose to fructose;Journal of Energy Chemistry;2013-05
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