Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors
Author:
Funder
Scientific and Technological Research Council of Turkey (TUBITAK)
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference24 articles.
1. Electrical properties of metal/GaN and SiO2/GaN interfaces and effects of thermal annealing
2. Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector
3. High-power AlGaN/GaN HEMTs for Ka-band applications
4. The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs
5. Recent advances in GaN transistors for future emerging applications
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2. Enhanced self-driven ultraviolet photodetection performance of high-k Ta2O5/GaN heterostructure;Materials Science in Semiconductor Processing;2024-02
3. The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates;ST PETER POLY U J-PH;2023
4. High-performance shortwave deep-UV response-enhanced photodetector based on nanoporous AlGaO/AlGaN with efficient light-harvesting;Journal of Materials Chemistry C;2023
5. High performance ultraviolet photodiode based on thin DPPT-TT donor–acceptor organic polymer;Applied Physics Letters;2022-11-14
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