Continuous wave laser dopant activation of ion doped poly-Si films
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference15 articles.
1. High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization
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3. Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors
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1. Low‐Temperature Polysilicon Oxide Thin‐Film Transistors with Coplanar Structure Using Six Photomask Steps Demonstrating High Inverter Gain of 264 V V −1;Advanced Engineering Materials;2020-02-13
2. Ion activation in boron-doped polycrystalline Si thin films prepared on glass substrates;Journal of the Korean Physical Society;2013-10
3. Polycrystalline silicon thin films prepared by Ni silicide induced crystallization and the dopant effects on the crystallization;Current Applied Physics;2012-11
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