Application of rapid thermal process to solution-processed Ti-silicate films for enhancing permittivity without losing amorphous nature-Reference-Cited by-同舟云学术

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Application of rapid thermal process to solution-processed Ti-silicate films for enhancing permittivity without losing amorphous nature

Published:2013-07 Issue: Volume:13 Page:S41-S44
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Lee Seung Muk,Hwang Soo Min,Hwang Soon Yong,Kim Tae Woong,Choi Ju Yun,Park Joong Keun,Kim Tae Jung,Kim Young Dong,Kim Hyoungsub,Lim Jun Hyung,Joo Jinho

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference47 articles.

1. High-κ/Metal Gate Science and Technology

2. Materials Fundamentals of Gate Dielectrics,2005

3. Leakage Current Mechanism of Amorphous and Polycrystalline Ta2 O 5 Films Grown by Chemical Vapor Deposition

4. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

5. Electrical and physical properties of room temperature deposited, mixed TiO2∕SiO2 oxides

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of heat treatment on the structural, morphological and optical properties of DC magnetron sputtered Ti x Si1−x O2 films;Bulletin of Materials Science;2016-05-31

2. Influences of rapid thermal process on solution-deposited Ti-silicate/Si films: Phase segregation, composition and interface changes, and dielectric properties;Materials Chemistry and Physics;2014-05

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