Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots
Author:
Funder
National Natural Science Foundation of China
MEMS
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference22 articles.
1. Emission wavelength selection for InGaAs quantum dots by anodic-aluminum-oxide membrane;Lay;J. Lumin.,2017
2. Enhanced luminescence and optical performance through strain minimization in self-assembled InAsQDs using dual quaternary-ternary/ternary-quaternary capping;Saha;J. Lumin.,2018
3. Molecular beam epitaxial growth of GaSb quantum dots on (001) GaAs substrate with InGaAs insertion layer;Khoklang;J. Cryst. Growth,2015
4. High-efficiency InAs/GaAs quantum dot solar cells by metal organic chemical vapor deposition;Tanabe;Appl. Phys. Lett.,2012
5. Room temperature observation of optical modes in transferred rolled-up InGaAs/GaAs quantum dot microtube with AlGaAs confining layers;Mao;Mater. Sci. Semicond. Process.,2018
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