Anti-crossing effect and optimization of waveguide structure in InGaN/GaN/AlGaN laser diode on sapphire substrate-Reference-Cited by-同舟云学术

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Anti-crossing effect and optimization of waveguide structure in InGaN/GaN/AlGaN laser diode on sapphire substrate

Published:2016-03 Issue:3 Volume:16 Page:371-377
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Kim Dong Churl,Bae Sung Bum,Kim Sung Bock,Ko Young-Ho,Leem Young Ahn,Nam Eun Soo

Funder

ICT R&D

international R&D

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference11 articles.

1. Super green InGaN single-quantum-well-structure light-emitting diodes;Nakamura;Jpn. J. Appl. Phys.,1995

2. GaN-based blue/green semiconductor laser;Nakamura;IEEE J. Sel. Top. Quantum. Electron.,1997

3. 350.9 nm UV laser diode grown on low-dislocation-density AlGaN;Iida;Jpn. J. Appl. Phys.,2004

4. A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode;Yoshida;Nat. Phot.,2008

5. Physics of Semiconductor Laser Device;Thompson,1980

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1. Enhancing the performance of InGaN-based near-infrared light-emitting diodes under a weakly polarized electric field;Applied Optics;2024-07-01

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