Investigation on I-V characteristics of current induced metal insulator transition in VO 2 device-Reference-Cited by-同舟云学术

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Investigation on I-V characteristics of current induced metal insulator transition in VO 2 device

Published:2017-11 Issue:11 Volume:17 Page:1444-1449
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Lee Gi Yong,Kim Howon,Mun Bongjin Simon,Park Changwoo,Ju Honglyoul

Funder

National Research Foundation of Korea (NRF)

Korean government (MOE)

NRF

MOE

Korea Basic Science Institute Research

GRI (GIST Research Institute) Project

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference25 articles.

1. Oxide electronics utilizing ultrafast metal-insulator transitions;Yang;Annu. Rev. Mater. Res.,2011

2. Oxides which show a metal-to-insulator transition at the Neel temperature;Morin;Phys. Rev. Lett.,1959

3. Thermal Filaments in vanadium dioxide;Berglund;IEEE Trans. Electron Devices,1969

4. Dynamics and control in complex transition metal oxides;Zhang;Annu. Rev. Mater. Res.,2014

5. Evidence of a pressure-induced metallization process in monoclinic VO2;Arcangeletti;Phys. Rev. Lett.,2007

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