Study on strain rate and heat effect on the removal mechanism of SiC during nano-scratching process by molecular dynamics simulation

Author:

Meng Binbin,Yuan Dandan,Xu Shaolin

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,Civil and Structural Engineering

Reference30 articles.

1. Surface and subsurface damage characteristics and material removal mechanism in 6H-SiC wafer grinding;Yan;Mater Res In nov,2014

2. Surface characterization of 6H-SiC (0001) substrates in indentation and abrasive machining;Yin;Int J Mach Tools Manuf,2004

3. Experimental study of surface performance of monocrystalline 6H-SiC substrates in plane grinding with a metal-bonded diamond wheel;Pan;Int J Adv Manuf Technol,2017

4. Investigation on mirror surface grinding characteristics of SiC materials;Kasuga;J Ceram Process Res,2009

5. Nanogrinding of SiC wafers with high flatness and low subsurface damage;Huo;Trans Nonferrous Met Soc China English Ed,2012

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