SEGR: A unique failure mode for power MOSFETs in spacecraft-Reference-Cited by-同舟云学术

SEGR: A unique failure mode for power MOSFETs in spacecraft

Published:1996-11 Issue:11-12 Volume:36 Page:1871-1874
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Allenspach M.,Brews J.R.,Galloway K.F.,Johnson G.H.,Schrimpf R.D.,Pease R.L.,Titus J.L.,Wheatley C.F.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Simulating Single-Event Burnout of N-Channel Power MOSFETs;Johnson;IEEE Trans. Electron Devices,1993

2. Evidence of the Ion's Impact Position Effects on SEB in N-Channel Power MOSFETs;Dachs;IEEE Trans. Nucl. Sci.,1994

3. A Conceptual Model of Single-Event Gate Rupture in Power MOSFETs;Brews;IEEE Trans. Nucl. Sci.,1993

4. Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide Thickness Dependence;Allenspach;IEEE Trans. Nucl. Sci.,1995

5. Single-Event Gate Rupture in Vertical Power MOSFETs; An Original Empirical Expression;Wheatley;IEEE Trans. Nucl. Sci.,1994

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