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Response Variability in Commercial MOSFET SEE Qualification

  • Published:2017-01 Issue:1 Volume:64 Page:317-324
  • ISSN:0018-9499
  • Container-title:IEEE Transactions on Nuclear Science
  • language:
  • Short-container-title:IEEE Trans. Nucl. Sci.

Author:

George J. S.,Clymer D. A.,Turflinger T. L.,Mason L. W.,Stone S.,Koga R.,Beach E.,Huntington K.,Lauenstein J.-M.,Titus J.,Sivertz M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machine Learning Based Non-Intrusive Inspection Technique to Quantify GaN HEMT Characteristics;2023 IEEE Design Methodologies Conference (DMC);2023-09-24

2. A 15 V-Tolerant and Radiation-Hardened MOSFET Driver With Positive and Negative References;IEEE Transactions on Aerospace and Electronic Systems;2022

3. 3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET;Proceedings of the 2021 5th International Conference on Electronic Information Technology and Computer Engineering;2021-10-22

4. Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs;IEEE Transactions on Nuclear Science;2021-07

5. Simultaneous Parametric and Functional Testing of Digital VLSI During Radiation Experiments;2021 International Siberian Conference on Control and Communications (SIBCON);2021-05-13
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