Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs-Reference-Cited by-同舟云学术

Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs

Published:1995-03 Issue:3 Volume:35 Page:603-608
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Anderson S.R.,Schrimpf R.D.,Galloway K.F.,Titus J.L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Ionizing Radiation Effects in MOS Devices and Circuits;Kerns,1989

2. The Stopping and Range of Ions in Solids;Ziegler,1985

3. Satellite Anomalies from Galactic Cosmic Rays

4. Simulating single-event burnout of n-channel power MOSFET's

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