Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET-Reference-Cited by-同舟云学术

Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET

Published:2021-11-23 Issue:11-12 Volume:176 Page:1038-1048
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Liang Xiaowen¹²,Zhao Jinghao¹²³,Zheng Qiwen¹,Cui JiangWei¹,Yang Sheng¹²,Wang Baoshun¹²,Zhang Dan¹,Yu XueFeng¹,Guo Qi¹

Affiliation:

1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China

2. University of Chinese Academy of Sciences, Beijing, China

3. Department of Electrical Engineering-Advanced Integrated Sensing Lab, Katholieke Universiteit Leuven, Leuven, Belgium

Funder

West Light Foundation

Chinese Academy of Sciences

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2021.1999239

Reference25 articles.

1. MIL-STD-750: Test Methods for Semiconductor Devices: TM1080: Single-Event Burnout and Single-Event Gate Rupture, Nov 2019.

2. Single-Event Burnout Mechanisms in SiC Power MOSFETs

3. Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs

4. A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility

5. Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation-induced degradation of silicon carbide MOSFETs – A review;Materials Science and Engineering: B;2024-02

2. Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET;IEEE Transactions on Electron Devices;2023-12

3. Study of heavy ion induced single event gate rupture effect in SiC MOSFETs;Japanese Journal of Applied Physics;2022-07-27