Reversible dielectric breakdown of thin gate oxides in MOS devices-Reference-Cited by-同舟云学术

Reversible dielectric breakdown of thin gate oxides in MOS devices

Published:1993-05 Issue:7 Volume:33 Page:1031-1039
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Suñé J.,Nafría M.,Aymerich X.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Oxide and Interface Issues in Nonvolatile Memory;Lai,1991

2. Modeling and Characterization of gate oxide reliability;Lee;IEEE Trans. Elect. Dev.,1988

3. Dielectric breakdown in MOS devices. Part I: Defect-Related and Intrinsic Breakdown;Wolters;Philips J. Res.,1985

4. Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures;Suñé;Microelectronics Journal,1989

5. Electrical breakdown in thin gate and tunneling oxides;Chen;IEEE J. Solid-State Circuits,1985

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