Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures-Reference-Cited by-同舟云学术

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Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures

Published:1989-11 Issue:6 Volume:20 Page:27-39
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Suñé J.,Placencia I.,Farrés E.,Barniol N.,Martin F.,Aymerich X.

Publisher

Elsevier BV

Subject

General Engineering

Reference20 articles.

1. Extended Abstracts of the Electrochemical Society Spring Meeting;Wolters,1987

2. Extended Abstracts of the Electrochemical Society Spring Meeting;Wolters,1987

3. Trap generation and occupation dynamics in SiO2 under charge injection conditions;Nissan-Cohen;J. Appl. Phys.,1986

4. Degradation of metal/oxide/semiconductor structures by Fowler-Nordheim tunnelling injection;Balland;Thin Solid Films,1987

5. Degradation and breakdown of gate oxides in VLSI devices;Suñé;Phys. Status Solidi A,1989

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultra-thin dielectric breakdown in devices and circuits: A brief review;Microelectronics Reliability;2015-02

2. Space Charge Analysis in Thin SiO2 Films: Local Vs. Uniform Degradation Models;MRS Proceedings;1997

3. Reversible dielectric breakdown of thin gate oxides in MOS devices;Microelectronics Reliability;1993-05

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