A new physics-based model for time-dependent Dielectric breakdown-Reference-Cited by-同舟云学术

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A new physics-based model for time-dependent Dielectric breakdown

Published:1996-11 Issue:11-12 Volume:36 Page:1655-1658
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Schlund B.J.,Suehle J.,Messick C.,Chaparala P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. High Field Emission Related Thin Oxide Wearout and Breakdown;Dumin,1994

2. A New Physics-Based Model for Time-Dependent-DielectricBreakdown;Schlund,1996

3. Theory of Elasticity;Timoshenko,1970

4. Electronic Structures And The Properties of Solids;Harrison,1989

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A non-defect precursor gate oxide breakdown model;Journal of Applied Physics;2023-06-16

2. Effect of pulsed electric fields on dielectric breakdown in Cu damascene interconnects;Applied Physics Express;2015-02-26

3. Time-Dependent Dielectric Breakdown of 4H-SiC/$ \hbox{SiO}_{2}$ MOS Capacitors;IEEE Transactions on Device and Materials Reliability;2008-12

4. Challenges in SiC power MOSFET design;Solid-State Electronics;2008-10

5. Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs;IEEE Transactions on Electron Devices;2008-08

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