TEM investigations of the tungsten silicide films on silicon
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Properties of Mo‐Silicides in Si‐Gate Technology
2. Characteristics of TaSi2 / Poly ‐ Si Films Oxidized in Steam for VLSI Applications
3. Self-aligned TiSi2 for bipolar applications
4. Growth of thin films of refractory silicides on Si(100) in ultrahigh vacuum
5. Structure and properties of coevaporated WSix films
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The influence of an electric field on the mechanism of combustion synthesis of tungsten silicides;Journal of Materials Research;1995-10
2. A preliminary study of the formation of WSi2by high-current W ion implantation;Journal of Physics: Condensed Matter;1993-08-02
3. Influence of annealing temperature on structural, electrical and optical properties of WSi2;Applied Physics A Solids and Surfaces;1992-02
4. Applications of transmission electron microscopy to microstructural studies of epitaxial thin films;Surface and Coatings Technology;1989-04
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