A preliminary study of the formation of WSi2by high-current W ion implantation
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/5/i=31/a=014/pdf
Reference16 articles.
1. Ion Mixing
2. Properties of tungsten silicide film on polycrystalline silicon
3. Thermal stability and electrical conduction behavior of coevaporated WSi2±xthin films
4. TEM investigations of the tungsten silicide films on silicon
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