Thallium and indium doped Pb1−xSnxTe by liquid phase epitaxy-Reference-Cited by-同舟云学术

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Thallium and indium doped Pb1−xSnxTe by liquid phase epitaxy

Published:1974-06 Issue:6 Volume:9 Page:799-802
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Tomasetta L.R.,Fonstad C.G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference4 articles.

1. 1973 Device Research Conference;Tomasetta,1973

2. Liquid phase epitaxial growth of laser heterostructures in Pb1−xSnxTe

3. Improved surface quality of solution grown GaAs and Pb1−xSnxTe epitaxial layers: A new technique

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and characterization of thallium‐ and gold‐doped PbSe0.78Te0.22layers lattice matched with BaF2substrates;Applied Physics Letters;1994-10-24

2. Effect of indium on the electrical transport properties of Pb0.8Sn0.2Te thin films;Materials Research Bulletin;1988-01

3. Chapter 3 Semiconductor Lasers with Wavelengths Exceeding 2 μm;Semiconductors and Semimetals;1985

4. Effect of Indium on the Electrical Transport Properties of Epitaxial Thin SnTe Films;physica status solidi (a);1982-07-16

5. Effect of indium on the field effect studies of thin SnTe films;Journal of Applied Physics;1982-04

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