The ion implantation of ZnS-Reference-Cited by-同舟云学术

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The ion implantation of ZnS

Published:1973-08 Issue:8 Volume:8 Page:893-897
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Georgobiani A.N.,Kotljarevsky M.B.,Zlobin V.N.,Todual P.A.,Generalov Yu.P.,Dement'ev B.P.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference2 articles.

1. ELECTRICAL TRANSPORT AND CONTACT PROPERTIES OF LOW RESISTIVITY n‐TYPE ZINC SULFIDE CRYSTALS

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The construction of light emitting diodes on the base of wide gap II–VI semiconductor compounds;Journal of Luminescence;1991-01

2. Annealing of radiation-induced defects in ion-implanted AIIBVI single crystals;Soviet Physics Journal;1989-03

3. Defect creation and doping of p-type impurities in ZnS crystals;Physica B+C;1983-02

4. Ion implanation in group II–VI compounds;Progress in Crystal Growth and Characterization;1983-01

5. Ion implantation of zinc sulphide;Radiation Effects;1980-01

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