Annealing of radiation-induced defects in ion-implanted AIIBVI single crystals-Reference-Cited by-同舟云学术

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Annealing of radiation-induced defects in ion-implanted AIIBVI single crystals

Published:1989-03 Issue:3 Volume:32 Page:198-203
ISSN:0038-5697
Container-title:Soviet Physics Journal
language:en
Short-container-title:Soviet Physics Journal

Author:

Georgobiani A. N.,Kotlyarevskii M. B.,Dement'ev B. P.,Mikhalenko V. N.,Serdyuk N. V.,Urusov B. G.,Yakubovich N. I.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF00897384.pdf

Reference21 articles.

1. A. N. Georgobiany and M. B. Katljarevsky, Proceedings of the Summer School on Optoelectronic and Integr. Optics, Prague (1977), p. 3.

2. A. N. Georgobiany, M. B. Kotljarevsky, V. N. Zlobin, et al., Mater. Res. Bull., 8, 893?897 (1973).

3. Yu. V. Bochkov, A. N. Georgobiani, B. P. Dement'ev, M. B. Kotlyarevskii, et al., Fiz. Tekh. Poluprovodn.,10, No. 2, 316?319 (1976).

4. A. N. Georgobiani, B. P. Dement'ev, M. B. Kotlyarevskii, and P. E. Ramazanov, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 10, 61?67 (1977).

5. A. N. Georgobiany and M. B. Kotlajarevsky, Proceedings of the 1st USA-USSR Seminar on Ion Implantation, Albany (1977), pp. 91?106.

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