Growth of GaInAs/InP by the vapor phase epitaxy hydride method-Reference-Cited by-同舟云学术

Growth of GaInAs/InP by the vapor phase epitaxy hydride method

Published:1988-09 Issue:9 Volume:23 Page:1285-1297
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Lassalle F.,Porte A.,Laporte J.L.,Pariset C.,Cadoret M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference36 articles.

1. H. Jurgensen, D. Schmitz, M. Heyen and P. Balk: “Low temperature growth of high purity GaInAs for the preparation of GaInAs/InP multilayers using the hydride system” Institute of semiconductors Electronics/SFB202, Aachen Technical University, D5100 Aachen, FRG.

2. Growth of VPE InP/InGaAs on InP for photodiode application

3. Growth of VPE InP/InGaAs on InP for photodiode application

4. Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy technique

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