Stacking faults in silicon carbide (6H) as observed by means of transmission electron microscopy-Reference-Cited by-同舟云学术

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Stacking faults in silicon carbide (6H) as observed by means of transmission electron microscopy

Published:1971-07 Issue:7 Volume:6 Page:613-619
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Van Landuyt J.,Amelinckx S.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference3 articles.

1. Polymorphism and Polytypism in Crystals;Verma,1966

2. Electron Microscopy of Dislocations and Other Defects in Sapphire and in Silicon Carbide, Thinned by Sputtering

3. The Direct Observation of Dislocations;Amelinckx,1964

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reply to “Response to “Diffraction artefacts from twins and stacking faults, and the mirage of hexagonal, polytypes or other superstructures"”;Scripta Materialia;2021-10

2. Stacking Fault Duplication in 6H-SiC Single Crystal;Japanese Journal of Applied Physics;2008-06-13

3. Transmission electron microscopy studies of dislocation mechanisms in as-sintered α-SiC and after creep experiments at high temperature;Materials Science and Engineering: B;1992-01

4. High Resolution Electron Microscopy in Materials Science;Examining the Submicron World;1986

5. On the influence of crystal orientation on the high resolution image contrast of polytypes;physica status solidi (a);1985-02-16

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