The effect of bilayer regions on the response of epitaxial graphene devices to environmental gating-Reference-Cited by-同舟云学术

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The effect of bilayer regions on the response of epitaxial graphene devices to environmental gating

Published:2015-11 Issue: Volume:93 Page:896-902
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Hill-Pearce R.E.,Eless V.,Lartsev A.,Martin N.A.,Barker Snook I.L.,Helmore J.J.,Yakimova R.,Gallop J.C.,Hao L.

Funder

UK NMS Programme

EURAMET

European Union

European Union Seventh Framework Programme

UK Department for Business

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference33 articles.

1. Analysis of the formation conditions for large area epitaxial graphene on SiC substrates;Yakimova;Mater Sci Forum,2010

2. The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC;Eriksson;Appl Phys Lett,2012

3. Towards a quantum resistance standard based on epitaxial graphene;Tzalenchuk;Nat Nano,2010

4. Quantum hall effect and quantum point contact in bilayer-patched epitaxial graphene;Chua;Nano Lett,2014

5. On the differing sensitivity to chemical gating of single and double layer epitaxial graphene explored using scanning kelvin probe microscopy;Pearce;ACS Nano,2013

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1. Superior Anchoring of Sodium Polysulfides to the Polar C2N 2D Material: A Potential Electrode Enhancer in Sodium–Sulfur Batteries;Langmuir;2020-10-23

2. Adsorption dynamics of CVD graphene investigated by a contactless microwave method;2D Materials;2018-05-17

3. Changes in work function due to NO2 adsorption on monolayer and bilayer epitaxial graphene on SiC(0001);Physical Review B;2016-11-10

4. Device applications of epitaxial graphene on silicon carbide;Vacuum;2016-06

5. Investigation of CVD graphene topography and surface electrical properties;Surface Topography: Metrology and Properties;2016-02-26

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