Current self-amplification effect of graphene-based transistor in high-field transport-Reference-Cited by-同舟云学术

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Current self-amplification effect of graphene-based transistor in high-field transport

Published:2014-10 Issue: Volume:77 Page:1090-1094
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Chen Wei,Qin Shiqiao,Zhang Xue-Ao,Zhang Sen,Fang Jingyue,Wang Guang,Wang Chaocheng,Wang Li,Chang Shengli

Funder

National Natural Science Foundation of China

open foundation based on the innovation platform of Hunan key laboratorie

open foundation of State Key Laboratory of High Performance Computing

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference26 articles.

1. Graphene transistors;Schwierz;Nat Nanotechnol,2010

2. A high-performance top-gate graphene field-effect transistor based frequency doubler;Wang;Appl Phys Lett,2010

3. High-frequency, scaled graphene transistors on diamond-like carbon;Wu;Nature,2011

4. High mobility, printable, and solution-processed graphene electronics;Wang;Nano Lett,2010

5. Transport properties of graphene in the high-current limit;Barreiro;Phys Rev Lett,2009

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