Formation mechanism of graphene buffer layer on SiC(0 0 0 1)-Reference-Cited by-同舟云学术

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Formation mechanism of graphene buffer layer on SiC(0 0 0 1)

Published:2015-01 Issue: Volume:81 Page:63-72
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Strupinski W.,Grodecki K.,Caban P.,Ciepielewski P.,Jozwik-Biala I.,Baranowski J.M.

Funder

European Science Foundation

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference50 articles.

1. Electronic confinement and coherence in patterned epitaxial graphene;Berger;Science,2006

2. Highly ordered graphene for two dimensional electronics;Hass;Appl Phys Lett,2006

3. Why multilayer graphene on 4H-SiC(0001¯) behaves like a single sheet of graphene;Hass;Phys Rev Lett,2008

4. Origin of anomalous electronic structures of epitaxial graphene on silicon carbide;Kim;Phys Rev Lett,2008

5. Ripples in epitaxial graphene on the Si-terminated SiC(0001) surface;Varchon;Phys Rev B,2008

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3. Formation of graphene nanoribbons on the macrofacets of vicinal 6H -SiC(0001) surfaces;Physical Review Materials;2022-12-09

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