The nature of dislocation sources and strain relief in InAsyP1−y films grown on 〈100〉 InP substrates
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference24 articles.
1. Defects in epitaxial multilayers
2. Dislocation Mechanisms of Relaxation in Strained Epitaxial Films
3. The accommodation of misfit at {100} heterojunctions in III–V compound semiconductors by gliding dissociated dislocations
4. The characterization of misfit dislocations at {100} heterojunctions in III–V compound semiconductors
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