Molecular beam epitaxy of GaAsBi and related quaternary alloys
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Elsevier
Reference61 articles.
1. Growth of InSb1-xBix single crystals by Czochralski method
2. InSb1-xBixFilms Grown by Molecular Beam Epitaxy
3. Indium antimonide‐bismuth compositions grown by molecular beam epitaxy
4. Organometallic vapor phase epitaxial growth and characterization of InAsBi and InAsSbBi
5. Fluorescence EXAFS Study on Local Structures around Bi Atoms in InAs1-xBixGrown by Low-pressure MOVPE
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1. Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates;Journal of Alloys and Compounds;2022-06
2. Temperature-Insensitive Band-Gap III-V Semiconductors: Tl-III-V and III-V-Bi;Springer Handbook of Electronic and Photonic Materials;2017
3. Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures;Nanoscale;2015
4. Long-wavelength emission in photo-pumped GaAs1−xBix laser with low temperature dependence of lasing wavelength;Applied Physics Letters;2013-11-11
5. Localized States in GaAsBi and GaAs/GaAsBi Heterostructures;Bismuth-Containing Compounds;2013
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