Junction Formation in Silicon by Rapid Thermal Annealing
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Publisher
Elsevier
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2. Interstitial charge states in boron-implanted silicon;Journal of Applied Physics;2005-03-15
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4. Low-energy cluster ion beam modification of surfaces;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
5. Simulation of clustering and transient enhanced diffusion of boron in silicon;Journal of Applied Physics;1998-11
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